Dr. Seo’s Research Site


Dr. Hye-Won Seo


  • Nitride nanostructure and film fabrication by metal organic vapour deposition (MOCVD) system and molecular beam epitaxy (MBE) growth system
  • Transparent oxide metal deposition using sputtering and pulsed laser deposition (PLD) system
  • High efficient light emitting diode (LED) and Laser diode (LD) device fabrication and characterization.
  • Nano photo-detector and photo-transistor device fabrication and characterization.
  • High efficient solar cell device fabrication and characterization
  • Strain effect and strain-induced defect of heterostructural materials.


  • Associate Professor, Physics & Astronomy/University of Arkansas at Little Rock ( Aug 2006~ )
  • Post doctor, Texas Center for Superconductivity and Advanced Materials/University of Houston ( Aug 2004~Aug 2006 )
  • Process Integration Engineer, CPU Technology Team /Samsung Electronics, Korea ( Feb 1996~Oct 1997 )


  • Ewha Womans University, Seoul, Korea. Physics B.S. ( Feb 1996 )
  • University of Houston, Houston, TX. Physics Ph. D. ( Aug 2004 )


  • Mr. Dever Norman (Ph. D student)
  • Mr. Nick Misenheimer (Undergraduate student)
  • Ms. Janviere Umuhoza (Undergraduate student)
  • Mr. Shane Talyor (Undergraduate student)
  • Mr. Keith Stewart ( Former: Undergraduate Student; Currently Purdue University)


  • H. W. Seo, L. W. Tu, Y. T. Lin, C. Y. Ho, Q. Y. Chen, L. Yuan, D. P. Norman, and N. J. Ho, “p-GaN/InGaN/n-GaN pedestal nanorods: Effect of postgrowth annealing on the electrical performance.”., Appl. Phys. Lett. 94, 201907 (09). Selected for the June. 8 issue of Virtual Journal of Nanoscale Science & Technology.
  • L. H. Chu, E. Y. Chang, Y. H. Wu, J. C. Huang, Q.Y. Chen, W. K. Chu, H. W. Seo, and C. T. Lee, “Study of interfacial reactions of Pt-based Schottky contacts on InGaP”, Appl. Phys. Lett. 92, 082108 (08).
  • K. R. Wang, S. J. Lin, L. W. Tu, M. Chen, Q. Y. Chen, T. H. Chen, H. W. Seo, N. H. Tai, S. C. Chang, I. Lo, D. P. Wang, W. K. Chu, “InN nanotips as excellent field emitters”, Appl. Phys. Lett. 92, 123105 (08).”
  • H.W. Seo, Q.Y. Chen, M.N. Iliev, L.W. Tu, C.L. Hsiao, J.K. Meen, and Wei-Kan Chu., “Epitaxial GaN nanorods free from strain and luminescent defects ”, Appl. Phys. Lett. 88, 153124 (06); Selected for the April, 2006 issue of Virtual Journal of Nanoscale Science and Technology.
  • C.L. Hsiao, L.W. Tu, T. W. Chi, H.W. Seo, Q.Y. Chen, and Wei-Kan Chu., “Buffer controlled GaN nanorods growth on Si(111) substrates by plasma-assisted molecular beam epitaxy”, Journal of Vacuum Science & Technology B 24, 845 (06)
  • H.W. Seo, Q.Y. Chen, L.W. Tu, M. Chen, X.M. Wang, C.L. Hsiao, Y. J. Tu, L. Shao, O. Lozano, and Wei-Kan Chu., “GaN nanorod assemblies on self-implanted (111) Si substrates”, MicroElectro Eng 83, 1714 (06)
  • T. Busani, R. A. B. Devine, X.K. Yu, H. W. Seo, “ Electrical and physical properties of room temperature deposited, mixed TiO2/SiO2 oxides” Journal of Vacuum Science & Technology A 24, 369 (06).
  • H.W. Seo, Q.Y. Chen, L.W. Tu, C.L. Hsiao, M.N. Iliev, and Wei-Kan Chu., “Catalytic nanocapillary condensation and epitaxial GaN nanorod growth”, Phys. Rev. B 71, 235314 (05).
  • H.W. Seo, Q.Y. Chen, M.N. Iliev, N. Kolev, U. Welp, T. H. Johansen, C. Wang, and W.K. Chu,“Chain-oxygen ordering in twin-free YBa2Cu3O7-δ single crystals driven by 20 keV electron irradiation”, Phys. Rev. B 72, 052501 (05); Selected for the August, 2005 issue of Virtual Journal of Applications of Superconductivity.


  • Hye-Won Seo, Li-Wei Tu, Cheng-Ying Ho, and Chang-Kong Wang, “Multi-Junction Solar Cell”, U.S. patent (08) #: 20080178931
  • W.K. Chu, H.W. Seo, Q.Y. Chen, X.M. Wang, L.T. Tu, C.L. Hsaio, M.Chen, and Y.J. Tu, “GaN nanorod arrays formed by ion beam implantation”, U.S. patent (07). File #: 2007032802


  • Metal organic chemical vapor deposition (MOCVD) system: It can be used for the fabrication of the nitride nanostructures or films. This is a plasma assisted deposition system with five (In, Al, Ga, Mg, & Si) bubblers.
  • Time resolved electroluminescence / photoluminescence (TREL / TRPL) system: This system allows the correlated luminescence and photo-carrier lifetime studies of solar-cell and light emitting devices, covering the spectral range from 270 nm to 850 nm (UV-Vis) and the lifetime from ~100 ps to a few ms.
  • Solar simulator with ozone-free Xenon lamp: It is to measure the energy conversion efficiency of the solar cell devices. For automatic data acquisition and storage, a Labview computer program was established.

Contact Information:

Physics Building, Room 108E
Department of Physics and Astronomy
University of Arkansas at Little Rock
2801 S. University Avenue
Little Rock AR 72204-1099
Tel: 501-569-8965, Fax: 501-569-3314
Email: hwseo@ualr.edu